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NTGS3447P
Power MOSFET
-12 V, -5.3 A, Single P-Channel, TSOP-6
Features
? Low R DS(on) in TSOP-6 Package
? 1.8 V Gate Rating
? This is a Pb-Free Device
http://onsemi.com
Applications
? Battery Switch and Load Management Applications in Portable
Equipment
? High Side Load Switch
? PA Switch
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
-12 V
R DS(on) MAX
40 m W @ -4.5 V
53 m W @ -2.5 V
72 m W @ -1.8 V
P-Channel
I D MAX
-4.7 A
-4.1 A
-2.0 A
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
V DSS
V GS
Value
-12
$ 8
Unit
V
V
1 2 5 6
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
-4.7
-3.4
A
3
t v 5s
T A = 25 ° C
-5.3
4
Power Dissipation
(Note 1)
Steady
State
T A = 25 ° C
P D
1.25
W
MARKING
t v 5s
1.6
DIAGRAM
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
-3.4
-2.5
0.7
A
W
1
TSOP-6
CASE 318G
STYLE 1
1
SE M G
G
Pulsed Drain Current
t p = 10 m s
I DM
-19
A
SE = Device Code
M = Date Code
Operating Junction and Storage Temperature
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T J ,
T STG
T L
-55 to
150
260
° C
° C
G = Pb-Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Drain Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
6
5
4
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [2 oz] including traces)
2. Surface-mounted on FR4 board using the minimum recommended pad size.
1
2
3
Drain Drain Gate
ORDERING INFORMATION
Device
NTGS3447PT1G
Package
TSOP-6
Shipping ?
3000 / Tape & Reel
(Pb-Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2007
August, 2007 - Rev. 0
1
Publication Order Number:
NTGS3447P/D
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相关代理商/技术参数
NTGS3455T1 功能描述:MOSFET 30V 3.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGS3455T1/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:MOSFET -3.5 Amps， -30 Volts
NTGS3455T1_07 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:MOSFET -3.5 Amps, -30 Volts
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NTGS4111P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET (-30 V, -4.7 A, Single P-Channel, TSOP-6)
NTGS4111PT1 功能描述:MOSFET -30V -4.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGS4111PT1G 功能描述:MOSFET -30V -4.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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